Raman scattering in heavily boron-doped single-crystal diamond

G. Faggio, G. Messina, S. Santangelo, D. Alfieri, G. Prestopino, I. Ciancaglioni, M. Marinelli


A series of boron-doped homoepitaxial diamond films grown by Microwave Plasma Enhanced Chemical Vapor Deposition at the University of Rome "Tor Vergata" have been investigated with Raman spectroscopy. As the boron content increases, we observed systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously in samples grown at higher boron content.


Diamond film; Boron doping; Raman spectroscopy

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DOI: http://dx.doi.org/10.1478/C1V89S1P032

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