A New Tool for Bipolar Transistor Characterization based on HICUM

E. Castro, S. Coco, A. Laudani, L. Lo Nigro, G. Pollicino

Abstract


This paper presents a tool for the characterization of bipolar transistors through the extraction of the main parameters of the bipolar model HICUM, one of the most advanced physics-based model for strongly non-linear and high-frequency operating conditions. The extraction flow for a single transistor geometry considers specific bias regions of the device allowing simplifications of HICUM equations able to obtain the desired device parameters. Device data have been obtained from simulations using a specific parameter set, while the tool utilize the default parameter set for internal issues. The procedure is fully automated and has been successfully tested on simulated data.

[DOI: 10.1685 / CSC06041] About DOI

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DOI: http://dx.doi.org/10.1685/




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