Numerical Coupling of Electric Circuit Equations with the Transient Energy-Transport Equations for Semiconductors

Markus Brunk, Ansgar Juengel

Abstract


In our talk we consider the simulation of electric circuits containing semiconductor devices. We present the coupling of the DAE we get for the electric circuit and the PDEs we get for devices. For modelling devices we employ the transient energy-transport model for majority carriers, as it accounts for thermal effects.
The ET-model is written a drift-diffusion formulation, which is utilised in the discretisation.

We dwell on the numerical solution by use of mixed hybrid finite elements for space-discretisation, which accounts for current-continuity.

Finally we will illustrate the results of the simulation of a simple circuit containing one semiconductor device.

[DOI: 10.1685 / CSC06029] About DOI

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DOI: http://dx.doi.org/10.1685/




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