Hole Mobilities in the Silicon Semiconductor: the Case of Warped Band

Salvatore La Rosa, Vittorio Romano

Abstract


The maximum entropy principle is used to get a consistent hydrodynamical model for the transport of holes in semiconductors and then from this an asymptotic energy-transport and drift-diffusion models are derived. The valence bands are described with warped functions. An explicit formula for the low field mobility is deduced.

[DOI: 10.1685 / CSC06173] About DOI

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[DOI: 10.1685/] About DOI

Url Resolver: : http://dx.doi.org/10.1685/




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