Free-Flight Time Generation in Direct Simulation Monte Carlo for Carrier Transport in Semiconductors
Abstract
This paper deals with the Direct Simulation Monte Carlo for carrier transport in submicron semiconductor devices.
Different methods for the generation of the scattering times, called Constant-Time technique (CTT) and Self-Scattering technique (SST), are presented and compared, in order to analyze their efficiency and precision.
One dimensional steady-state simulations of a $n^+ - n - n^+$ silicon diode have been carried out.
For this particular device, SST seems to be more efficient than CTT.
[DOI: 10.1685/CSC09223] About DOI
Different methods for the generation of the scattering times, called Constant-Time technique (CTT) and Self-Scattering technique (SST), are presented and compared, in order to analyze their efficiency and precision.
One dimensional steady-state simulations of a $n^+ - n - n^+$ silicon diode have been carried out.
For this particular device, SST seems to be more efficient than CTT.
[DOI: 10.1685/CSC09223] About DOI
Keywords
Submicron Silicon semiconductor devices; Direct Monte Carlo Simulation; free flight
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[DOI: 10.1685/] About DOI
Url Resolver: : http://dx.doi.org/10.1685/
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