Evolutionary Algorithms for Doping Profile Optimization in Semiconductor Design

V. Di Stefano, C. R. Drago, C.L.R. Milazzo

Abstract


This article, which is a preliminary work, deals with the optimal design of a semiconductor device. The objective is to slightly change the doping profile in order to get a gain in the outflow current. Three different black box algorithms are compared with respect to the computational cost and the quality of the solution. The CRS algorithm seems to be the most competitive allowing to reach the optimum with a low computational cost.

[DOI: 10.1685/CSC06069] About DOI

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DOI: http://dx.doi.org/10.1685/




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