Proprietà elettoniche dei siliciuri di ferro

Girlanda, R. and Piparo, E. (1994) Proprietà elettoniche dei siliciuri di ferro. Accademia Peloritana dei Pericolanti, Classe di Scienze FF. MM. NN., LXXII (Supplement 1). pp. 525-530.

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Abstract

The results of self-consistent linear muffin-tin orbital calculations for the ordered end memhers of the $FeSi_1_+_x$ series, i.e. FeSi (x=O) with CsCl structure and $\alpha-FeSi_2$ and $\gamma-FeSi_2 (x=l)$ with tetragonal and cubic fluorite structure respectively, predict semimetallic behaviour for FeSi and metallic behaviour and higher stability for $\alpha-FeSi_2$ and $\gamma-FeSi_2$ . The valence band density of states (D.O.S.) features of the $\alpha-FeSi_2$ differ only slightly from those of the cubic fluorite ( $\gamma-FeSi_2$ ). The analysis of the valence band photoemission spectra taken on silicide thin films epitaxially grown on Si (111) substrates can, therefore, only estimate the composition of the mono and disilicide phases present in the annealed films, but cannot distinguish between $\alpha-FeSi_2$ and $\gamma-FeSi_2$ .

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Item Type:	Article
Subjects:	M.U.S. - Miscellanea > Atti Accademia Peloritana > Classe di Scienze Fisiche, Matematiche e Naturali > 1994 > Supplemento 1 parte 2 M.U.S. - Miscellanea > Atti Accademia Peloritana > Classe di Scienze Medico-Biologiche > 1994 > Supplemento 1 parte 2 M.U.S. - Miscellanea > Atti Accademia Peloritana > Classe di Scienze Giuridiche, Economiche e Politiche > 1994 > Supplemento 1 parte 2 M.U.S. - Miscellanea > Atti Accademia Peloritana > Classe di Lettere Filosofia e belle Arti > 1994 > Supplemento 1 parte 2
Depositing User:	Mr Nunzio Femminò
Date Deposited:	18 Apr 2014 07:44
Last Modified:	18 Apr 2014 07:44
URI:	http://cab.unime.it/mus/id/eprint/5174

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